Path:OKDatasheet > Catalog Datasheet > Motorola Datasheet > MTD1P50E
MTD1P50E spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E similares
- MTD1302
- HDTMOS E-FET high dansity power FET D2PAK for surface mount
- MTD15N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD15N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD1N50E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N60E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1P50E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E Datasheet e Spec
Fabricante : Motorola
Embalagem : DPAK
Pins : 4
Temperature : Min -55 °C | Max 150 °C
Tamanho : 101 KB
Aplicativo : TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E PDF Download