Path:OKDatasheet > Catalog Datasheet > Motorola Datasheet > MTD2N50E
MTD2N50E spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTD2N50E similares
- MTD20N03HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20N06HD
- HDTMOS E-FET power field effect transistor D2PAK for surface mount
- MTD20N06HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD20P03HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20P06HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD2955E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD2955V
- TMOS V power field effect transistor D2PAK for surface mount
MTD2N50E Datasheet e Spec
Fabricante : Motorola
Embalagem : DPAK
Pins : 4
Temperature : Min -55 °C | Max 150 °C
Tamanho : 328 KB
Aplicativo : TMOS E-FET high energy power FET D2PAK for surface mount
MTD2N50E PDF Download