Path:OKDatasheet > Catalog Datasheet > Motorola Datasheet > MTD3055EL1
MTD3055EL1 spec: N-channel enhancement-mode silicon gate, 10A, 80V
MTD3055EL1 similares
- MTD3055EL
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055EL1
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3302
- HDTMOS single N-channel field effect transistor
MTD3055EL1 Datasheet e Spec
Fabricante : Motorola
Embalagem : 368-06
Pins : 3
Temperature : Min -65 °C | Max 150 °C
Tamanho : 417 KB
Aplicativo : N-channel enhancement-mode silicon gate, 10A, 80V
MTD3055EL1 PDF Download