MTW6N100E spec: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E similares

MTW6N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E Datasheet e Spec

Fabricante : Motorola

Embalagem : TO-247AE

Pins : 4

Temperature : Min -55 °C | Max 150 °C

Tamanho : 214 KB

Aplicativo : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole