Path:OKDatasheet > Catalog Datasheet > NEC Datasheet > NE4210S01-T1
NE4210S01-T1 spec: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1 similares
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- N-channel HJ-FET
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- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
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NE4210S01-T1 Datasheet e Spec
Fabricante : NEC
Embalagem : 4-pin u-x type mold
Pins : 0
Temperature : Min 0 °C | Max 0 °C
Tamanho : 71 KB
Aplicativo : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1 PDF Download