Path:okDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE Electronic-77
172 NTE2527 NTE191 NTE5230A NTE1792 NTE2011 NTE2590 NTE363 NTE581 NTE2401 NTE1682 NTE4915 NTE1650 NTE5545 NTE5602 NTE6031 NTE1858 NTE2334 NTE1235 NTE2015 NTE1805 NTE175 NTE5021A NTE70 NTE5304 NTE5652 NTE1214 2V025
Nome do ítem | Fabricante | Aplicativo |
---|---|---|
NTE2537 | NTE Electronic | Silicon complementary PNP transistor. High current switch. |
NTE1795 | NTE Electronic | Integrated circuit. RMS level sensor for dbx noise reduction system. |
NTE1172 | NTE Electronic | Integrated circuit. Phase-frequency detector. |
NTE2527 | NTE Electronic | Silicon complementary PNP transistor. High current switch. |
NTE191 | NTE Electronic | Silicon complementary NPN transistor. High voltage video amplifier. |
NTE5230A | NTE Electronic | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 180V. Zener test current Izt = 14mA. |
NTE1792 | NTE Electronic | Integrated circuit. Dual attenuator. |
NTE2011 | NTE Electronic | Integrated circuit. 7-channel darlington array/driver. |
NTE2590 | NTE Electronic | Silicon NPN transistor. High voltage amp/switch. |
NTE363 | NTE Electronic | Silicon NPN transistor. RF power output, Po = 4W. |
NTE581 | NTE Electronic | General purpose silicon rectifier. Fast recovery. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 8A. |
NTE2401 | NTE Electronic | Silicon PNP transistor. RF stages in FM front ends. |
NTE1682 | NTE Electronic | Integrated circuit. Preamplifier circuit for remote control signal receivers. |
NTE4915 | NTE Electronic | Surge clamping, transient overvoltage suppressor, bidirectional. VR = 10.20V max reverse stand off voltage. |
NTE1650 | NTE Electronic | Integrated circuit. Color TV luminance-chroma system w/auto flesh. |
NTE5545 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. |
NTE5602 | NTE Electronic | TRIAC, 4 Amp. Peak repetitive off-state voltage Vdrm = 100V. |
NTE6031 | NTE Electronic | Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A. |
NTE1858 | NTE Electronic | Integrated circuit. Vrtical deflection circuit. |
NTE2334 | NTE Electronic | Silicon NPN transistor. Darlington driver, w/internal damper and zener diode. |
NTE1235 | NTE Electronic | Integrated circuit. Squelch amp. |
NTE2015 | NTE Electronic | Integrated circuit. 7-channel darlington array/driver. |
NTE1805 | NTE Electronic | Integrated circuit. Recording video signal processing circuit. |
NTE175 | NTE Electronic | Silicon complementary NPN transistor. High voltage, medium power switch. Compl to NTE38. |
NTE5021A | NTE Electronic | Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 12V, Zener test current Izt = 20mA. |
NTE70 | NTE Electronic | Silicon NPN transistor. High voltage power amplifier, switch. |
NTE5304 | NTE Electronic | Silicon bridge rectifier, 1.5 A. Maximum recurrent peak reverse voltage Vrrm = 400V. |
NTE5652 | NTE Electronic | TRIAC, 2.5A. Repetitive peak off-state voltage Vdrm = 400V. RMS on-state current 3A. |
NTE1214 | NTE Electronic | Integrated circuit. AM tuner system. |
2V025 | NTE Electronic | Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 39 V @ 1mA DC test current. |