Path:okDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE Electronic-83
588 NTE170 NTE264 NTE6068 NTE366 NTE1199 NTE290 NTE1441 NTE266 NTE2086 NTE1784 NTE326 NTE3047 NTE8182 NTE998 NTE5943 NTE3302 NTE5011T1 NTE6112 NTE5884 NTE5440 NTE273 NTE6403 NTE350 NTE56 NTE6020 NTE919D NTE1690
Nome do ítem | Fabricante | Aplicativo |
---|---|---|
NTE5517 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A. |
NTE5177A | NTE Electronic | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 5.1V. Zener test current Izt = 490mA. |
NTE588 | NTE Electronic | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. |
NTE170 | NTE Electronic | Single phase bridge rectifier, 2.0 Amp. Max recurrent peak reverse voltage 1000 V. Max average forward output current 2 A. |
NTE264 | NTE Electronic | Silicon complementary PNP transistor. Darlington power amplifier. |
NTE6068 | NTE Electronic | Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 800V. Max forward current 70A. |
NTE366 | NTE Electronic | Silicon NPN transistor. RF power output, Po = 25W @ 512MHz. |
NTE1199 | NTE Electronic | Integrated circuit. CMOS frequency divider. |
NTE290 | NTE Electronic | Silicon complementary PNP transistor. Audio power amplifier, switch. |
NTE1441 | NTE Electronic | Integrated circuit. FM IF amplifier, detector. |
NTE266 | NTE Electronic | Silicon NPN transistor. Darlington power amplifier. |
NTE2086 | NTE Electronic | Integrated circuit. 4-stage darlington array. |
NTE1784 | NTE Electronic | Integrated circuit. TV horizontal processor. |
NTE326 | NTE Electronic | Silicon P-channel JFET transistor. General purpose AF amplifier. |
NTE3047 | NTE Electronic | Optoisolator. TRIAC driver output |
NTE8182 | NTE Electronic | Thermal cut-off (thermal fuse). |
NTE998 | NTE Electronic | Integrated circuit. 1.22V reference diode. |
NTE5943 | NTE Electronic | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 15A. |
NTE3302 | NTE Electronic | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. |
NTE5011T1 | NTE Electronic | Zener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 5.6V, Zener test current Izt = 5mA. |
NTE6112 | NTE Electronic | Industrial rectifier. Repetitive voltae 1200V. Average forward current 500A. |
NTE5884 | NTE Electronic | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. |
NTE5440 | NTE Electronic | Silicon controlled rectifier (SCR). Isolated tab. Repetitive peak voltage Vrrm = 800V. RMS on-state current It = 9A. |
NTE273 | NTE Electronic | Silicon darlington complementary PNP power aplifier. |
NTE6403 | NTE Electronic | Integrated circuit. Silicon bilateral switch (SBS). |
NTE350 | NTE Electronic | Silicon NPN transistor. RF power amp, driver. |
NTE56 | NTE Electronic | Silicon NPN transistor. High gain switch and pass regulator. |
NTE6020 | NTE Electronic | Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A. |
NTE919D | NTE Electronic | Integrated circuit. High speed dual comparator. |
NTE1690 | NTE Electronic | Integrated circuit. Telephone DTMF dialer. |