Path:OKDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE3312
NTE3312 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Path:OKDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE3312
NTE3312 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Fabricante : NTE Electronic
Embalagem :
Pins : 3
Temperature : Min 0 °C | Max 150 °C
Tamanho : 19 KB
Aplicativo : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.