NTE4999 spec: Surge clamping, transient overvoltage suppressor, bidirectional. VR = 376.00V max reverse stand off voltage.

NTE4999 similares

NTE451
- Silicon N-cannel JFET transistor. VNF/UNF amplifier.
NTE452
- "Silicon N-cannel JFET transistor. VNF amplifier, mixer."
NTE454
- MOSFET, N-Ch, dual gate, TV UNF/RF amp, gate protected.
NTE457
- Silicon N-channel JFET transistor general purpose amplifier, switch.
NTE458
- N-channel silicon JFET general purpose, low noise, audio frequency amplifier.
NTE459
- N-channel silicon JFET transistor AF amplifier/chopper/switch.
NTE46
- Silicon NPN transistor. Darlington, general purpose amplifier, preamp, driver.
NTE464
- Silicon complementary MOSFET P-ch transistor. Enhancement mode for switching applications.

NTE4999 Datasheet e Spec

Embalagem :

Pins : 2

Temperature : Min -65 °C | Max 175 °C

Tamanho : 28 KB

Aplicativo : Surge clamping, transient overvoltage suppressor, bidirectional. VR = 376.00V max reverse stand off voltage.