Path:OKDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE5875
NTE5875 spec: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
Path:OKDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE5875
NTE5875 spec: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
Fabricante : NTE Electronic
Embalagem : DO4
Pins : 2
Temperature : Min -65 °C | Max 175 °C
Tamanho : 26 KB
Aplicativo : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.