Path:OKDatasheet > Catalog Datasheet > NTE Electronic Datasheet > NTE65
NTE65 spec: Silicon NPN transistor. High voltage, low noise for CATV, MATV.
NTE65 similares
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE65 Datasheet e Spec
Fabricante : NTE Electronic
Embalagem :
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Tamanho : 24 KB
Aplicativo : Silicon NPN transistor. High voltage, low noise for CATV, MATV.
NTE65 PDF Download