Path:OKDatasheet > Catalog Datasheet > Philips Datasheet > BUK555-200B
BUK555-200B spec: PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B similares
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100B
- 100 V, power MOS transistor
- BUK542-60A
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
- BUK543-100A
- 100 V, power MOS transistor
BUK555-200B Datasheet e Spec
Fabricante : Philips
Embalagem : TO220AB
Pins : 3
Temperature : Min 0 °C | Max 175 °C
Tamanho : 76 KB
Aplicativo : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B PDF Download