IRF830 similares

  • IRF830
    • 500 V, Power MOS transistor avalanche energy rated
  • IRF840
    • 500 V, Power MOS transistor avalanche energy rated

IRF830 Datasheet e Spec

Fabricante : Philips 

Embalagem : SOT 

Pins : 3 

Temperature : Min -55 °C | Max 150 °C

Tamanho : 63 KB

Aplicativo : 500 V, Power MOS transistor avalanche energy rated 

IRF830 PDF Download