Path:OKDatasheet > Catalog Datasheet > Philips Datasheet > PHB3N50E
PHB3N50E spec: 500 V, power MOS transistor avalanche energy rated
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PHB3N50E Datasheet e Spec
Fabricante : Philips
Embalagem : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 85 KB
Aplicativo : 500 V, power MOS transistor avalanche energy rated
PHB3N50E PDF Download