Path:OKDatasheet > Catalog Datasheet > Philips Datasheet > PHB7N60E
PHB7N60E spec: 600 V, power MOS transistor avalanche energy rated
PHB7N60E similares
- PHB73N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB78NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB78NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB7N60E
- 600 V, power MOS transistor avalanche energy rated
PHB7N60E Datasheet e Spec
Fabricante : Philips
Embalagem : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 100 KB
Aplicativo : 600 V, power MOS transistor avalanche energy rated
PHB7N60E PDF Download