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PHT4NQ10LT spec: 100 V, N-channel enhancement mode field-effect transistor
PHT4NQ10LT similares
- PHT4NQ10LT
- 100 V, N-channel enhancement mode field-effect transistor
- PHT4NQ10T
- 100 V, N-channel trenchMOS transistor
PHT4NQ10LT Datasheet e Spec
Fabricante : Philips
Embalagem : SOT
Pins : 3
Temperature : Min -65 °C | Max 175 °C
Tamanho : 381 KB
Aplicativo : 100 V, N-channel enhancement mode field-effect transistor
PHT4NQ10LT PDF Download