Path:OKDatasheet > Catalog Datasheet > Philips Datasheet > PHW8ND50E
PHW8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E similares
- PHW80NQ10T
- 100 V, N-channel trenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW8ND50E
- 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E Datasheet e Spec
Fabricante : Philips
Embalagem : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 80 KB
Aplicativo : 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E PDF Download