Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1001C
F1001C spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1001C
F1001C spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Fabricante : Polyfet RF
Embalagem :
Pins : 6
Temperature : Min -65 °C | Max 150 °C
Tamanho : 36 KB
Aplicativo : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor