F1034 spec: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 similares

F1034
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 34 KB

Aplicativo : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor