F1040 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 similares

F1040
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Tamanho : 35 KB

Aplicativo : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor