F1058 spec: 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1058 similares

F1058
- 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1058 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor