Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1066
F1066 spec: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1066
F1066 spec: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Fabricante : Polyfet RF
Embalagem :
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Tamanho : 42 KB
Aplicativo : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor