Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1070
F1070 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1070
F1070 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 41 KB
Aplicativo : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor