F1081 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 similares

F1081
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 43 KB

Aplicativo : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor