F1116 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 similares

F1116
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 46 KB

Aplicativo : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor