F1170 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 similares

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 47 KB

Aplicativo : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor