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F1222 similares

  • F1220
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1221
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1222
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1222 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 2 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1222 PDF Download