F1260 spec: "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"

F1260 similares

F1260
- "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"

F1260 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"