F1280 spec: 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 similares

F1280
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Tamanho : 42 KB

Aplicativo : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor