F1410 spec: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 similares

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Tamanho : 39 KB

Aplicativo : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor