F1430 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1430 similares

F1430
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1430 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor