F1510 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 similares

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Tamanho : 39 KB

Aplicativo : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor