F1535 spec: 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 similares

F1535
- 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 39 KB

Aplicativo : 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor