Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F2004
F2004 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F2004
F2004 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 40 KB
Aplicativo : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor