F2012 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 similares

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor