F2021 spec: 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 similares

F2021
- 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor