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F2211 similares

  • F2211
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  • F2212
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2213
    • 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2211 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 38 KB

Aplicativo : 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2211 PDF Download