F3002 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 similares

F3002
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 39 KB

Aplicativo : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor