F5001 spec: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 similares

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor