Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > L225
L225 spec: 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 similares
- L225
- 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Tamanho : 41 KB
Aplicativo : 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 PDF Download