Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > L2801
L2801 spec: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 similares
- L2801
- 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem : SO
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Tamanho : 46 KB
Aplicativo : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 PDF Download