Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > L8701P
L8701P spec: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P similares
- L8701P
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P Datasheet e Spec
Fabricante : Polyfet RF
Embalagem : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Tamanho : 46 KB
Aplicativo : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P PDF Download