Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > L8801P
L8801P spec: 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P Datasheet e Spec
Fabricante : Polyfet RF
Embalagem : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Tamanho : 43 KB
Aplicativo : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P PDF Download