Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > L8821P
L8821P spec: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P similares
- L8821P
- 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Datasheet e Spec
Fabricante : Polyfet RF
Embalagem : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Tamanho : 43 KB
Aplicativo : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P PDF Download