Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > LB401
LB401 spec: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 similares
- LB401
- 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 41 KB
Aplicativo : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 PDF Download