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LC801 spec: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 similares
- LC801
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 6
Temperature : Min -65 °C | Max 150 °C
Tamanho : 40 KB
Aplicativo : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 PDF Download