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LP701 spec: 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 similares
- LP701
- 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Tamanho : 38 KB
Aplicativo : 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 PDF Download