Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > LP801
LP801 spec: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP801 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Tamanho : 38 KB
Aplicativo : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP801 PDF Download