Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > LP821
LP821 spec: 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 similares
- LP821
- 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Tamanho : 38 KB
Aplicativo : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 PDF Download