Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > LQ801
LQ801 spec: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 similares
- LQ801
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 38 KB
Aplicativo : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 PDF Download